IPW65R041CFDFKSA1
MOSFET N-CH 650V 68.5A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, IPW65R041CFDFKSA1, offers a 650 V breakdown voltage and 68.5 A continuous drain current at 25°C. This through-hole device features a low Rds(on) of 41 mOhm at 33.1 A and 10 V gate drive. The IPW65R041CFDFKSA1 is engineered with a maximum power dissipation of 500 W (Tc) and a Tj of 150°C. Key parameters include a gate charge of 300 nC at 10 V and an input capacitance (Ciss) of 8400 pF at 100 V. This component is suitable for high-voltage power conversion applications across industries such as server power supplies, industrial power systems, and solar inverters. The device is supplied in a PG-TO247-3-1 package.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 68.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 33.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 3.3mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 100 V |
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