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IPW65R029CFD7XKSA1

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IPW65R029CFD7XKSA1

MOSFET N-CH 650V 69A TO247-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 650 V 69A (Tc) 305W (Tc) Through Hole PG-TO247-3

Additional Information

Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C69A (Tc)
Rds On (Max) @ Id, Vgs29mOhm @ 35.8A, 10V
FET Feature-
Power Dissipation (Max)305W (Tc)
Vgs(th) (Max) @ Id4.5V @ 1.79mA
Supplier Device PackagePG-TO247-3
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7149 pF @ 400 V

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