IPW60R280P6FKSA1
MOSFET N-CH 600V 13.8A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P6 series N-Channel Power MOSFET, part number IPW60R280P6FKSA1. This device features a 600V drain-source breakdown voltage and a continuous drain current of 13.8A at 25°C. The IPW60R280P6FKSA1 offers a maximum on-resistance of 280mOhm at 5.2A and 10V gate drive. Key parameters include a gate charge of 25.5 nC and input capacitance of 1190 pF at 100V. With a maximum power dissipation of 104W, this MOSFET is housed in a PG-TO247-3 package suitable for through-hole mounting. Operating temperature range is -55°C to 150°C. This component is utilized in applications such as power supplies and motor control.
Additional Information
Series: CoolMOS™ P6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 430µA |
| Supplier Device Package | PG-TO247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 100 V |
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