IPW60R280C6FKSA1
MOSFET N-CH 600V 13.8A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW60R280C6FKSA1 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device offers a continuous drain current of 13.8A (Tc) with a low on-resistance of 280mOhm at 6.5A, 10V. Key parameters include a gate charge of 43 nC at 10V and input capacitance of 950 pF at 100V. The MOSFET is housed in a PG-TO247-3-1 package, suitable for through-hole mounting. With a maximum power dissipation of 104W (Tc) and an operating temperature range of -55°C to 150°C (TJ), the IPW60R280C6FKSA1 is engineered for demanding power supply, solar inverter, and industrial motor control applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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