IPW60R230P6FKSA1
MOSFET N-CH 600V 16.8A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P6 series IPW60R230P6FKSA1 is a 600 V N-channel power MOSFET designed for high-efficiency switching applications. This device features a low on-resistance of 230 mOhm at 6.4 A and 10 V gate drive, minimizing conduction losses. With a continuous drain current capability of 16.8 A at 25°C and a maximum power dissipation of 126 W, it is suitable for demanding power conversion tasks. The IPW60R230P6FKSA1 offers a gate charge of 31 nC and input capacitance of 1450 pF, contributing to efficient switching performance. Packaged in a PG-TO247-3 through-hole format, this MOSFET operates across a temperature range of -55°C to 150°C. Its robust design makes it ideal for use in power supplies, solar inverters, and industrial motor control systems.
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 6.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 126W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 530µA |
| Supplier Device Package | PG-TO247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 100 V |
Request a Quote
Clients Also Buy
IPP60R190P6XKSA1
MOSFET N-CH 600V 20.2A TO220-3
IPA60R280P6XKSA1
MOSFET N-CH 600V 13.8A TO220-FP
IPL60R360P6SATMA1
MOSFET N-CH 600V 11.3A 8THINPAK
