IPW60R199CPFKSA1
MOSFET N-CH 600V 16A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPW60R199CPFKSA1, offers a 600V drain-source voltage and a continuous drain current of 16A at 25°C (Tc). This device features a low on-resistance of 199mOhm at 9.9A and 10V, with a maximum gate charge of 43 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 1520 pF at 100V. Designed for through-hole mounting in the PG-TO247-3-1 package, the IPW60R199CPFKSA1 provides a maximum power dissipation of 139W (Tc). Its operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch mode power supplies, and general purpose power switching.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 9.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 100 V |
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