IPW60R190C6FKSA1
MOSFET N-CH 600V 20.2A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPW60R190C6FKSA1, is designed for high-voltage switching applications. This device features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20.2A at 25°C (Tc). The Rds(on) is specified at a maximum of 190mOhm at 9.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 63nC (max) at 10V and input capacitance (Ciss) of 1400pF (max) at 100V. With a maximum power dissipation of 151W (Tc), this MOSFET is housed in a PG-TO247-3-1 package suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ). This component finds application in industries such as power supplies, industrial motor control, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 630µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V |
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