IPW60R165CPFKSA1
MOSFET N-CH 600V 21A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW60R165CPFKSA1 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a maximum continuous drain current of 21A at 25°C and a maximum power dissipation of 192W (Tc). The drain-source on-resistance (Rds On) is specified at 165mOhm at 12A, 10V. Key parameters include a gate charge (Qg) of 52 nC at 10V and an input capacitance (Ciss) of 2000 pF at 100V. The device is housed in a PG-TO247-3-1 package with a through-hole mounting type. The operating temperature range is from -55°C to 150°C (TJ). This technology is widely employed in power supply units, solar inverters, and industrial motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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