IPW60R160C6FKSA1
MOSFET N-CH 600V 23.8A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPW60R160C6FKSA1, offers a 600V drain-source voltage with a continuous drain current of 23.8A at 25°C (Tc). This through-hole component, housed in a PG-TO247-3-1 package, features a maximum power dissipation of 176W (Tc). The Rds On is specified at a maximum of 160mOhm at 11.3A and 10V gate-source voltage. Key parameters include a gate charge of 75 nC (max) at 10V and an input capacitance of 1660 pF (max) at 100V. This device is suitable for applications in power supplies, lighting, and industrial motor control. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 750µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 100 V |
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