IPW60R125CPFKSA1
MOSFET N-CH 600V 25A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW60R125CPFKSA1 is a 600V N-channel power MOSFET designed for high-efficiency applications. Featuring a continuous drain current capability of 25A at 25°C (Tc) and a low Rds(on) of 125mOhm at 16A, 10V, this component offers excellent conduction and switching performance. The device boasts a maximum power dissipation of 208W (Tc) and a gate charge of 70 nC at 10V. With an input capacitance (Ciss) of 2500 pF at 100V, it is suitable for demanding power conversion systems. This through-hole MOSFET is housed in a PG-TO247-3-1 package, operating across a temperature range of -55°C to 150°C. Its robust design makes it ideal for use in industrial power supplies, server power systems, and renewable energy applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.1mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
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