IPW60R099C6FKSA1
MOSFET N-CH 600V 37.9A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW60R099C6FKSA1 is a 600V N-Channel Power MOSFET within the TO-247-3 package. This device offers a continuous drain current of 37.9A at 25°C and a maximum power dissipation of 278W at the same temperature. Featuring a low on-resistance of 99mOhm at 18.1A and 10V gate drive, it boasts a gate charge of 119 nC at 10V and an input capacitance of 2660 pF at 100V. The operating temperature range is from -55°C to 150°C. This component is suitable for high-voltage switching applications across industries such as power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.21mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 119 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 100 V |
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