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IPW60R099C6FKSA1

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IPW60R099C6FKSA1

MOSFET N-CH 600V 37.9A TO247-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 600 V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3-1

Additional Information

Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C37.9A (Tc)
Rds On (Max) @ Id, Vgs99mOhm @ 18.1A, 10V
FET Feature-
Power Dissipation (Max)278W (Tc)
Vgs(th) (Max) @ Id3.5V @ 1.21mA
Supplier Device PackagePG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2660 pF @ 100 V

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