IPW60R080P7XKSA1
MOSFET N-CH 600V 37A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IPW60R080P7XKSA1, a N-Channel CoolMOS™ P7 series power MOSFET. This component features a drain-source voltage (Vdss) of 600 V and boasts a continuous drain current (Id) rating of 37 A at 25°C (Tc), with a maximum power dissipation of 129 W (Tc). The Rds On is specified at a maximum of 80 mOhm at 11.8 A and 10 V. Key characteristics include a gate charge (Qg) of 51 nC at 10 V and an input capacitance (Ciss) of 2180 pF at 400 V. The device is housed in a PG-TO247-3 package for through-hole mounting. This MOSFET is suitable for applications across industrial power supplies, solar inverters, and electric vehicle charging.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 11.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 129W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 590µA |
| Supplier Device Package | PG-TO247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 400 V |
Request a Quote
Clients Also Buy
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
