IPW60R075CPFKSA1
MOSFET N-CH 650V 39A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IPW60R075CPFKSA1 is a CoolMOS™ N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 39A at 25°C, with a maximum power dissipation of 313W. The Rds On is specified at 75mOhm at 26A and 10V gate drive. Key parameters include a gate charge (Qg) of 116 nC at 10V and input capacitance (Ciss) of 4000 pF at 100V. The device is housed in a PG-TO247-3-1 package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.7mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 100 V |
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