IPW60R075CPAFKSA1
AUTOMOTIVEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, IPW60R075CPAFKSA1, offers a 600V drain-source voltage and a continuous drain current of 39A at 25°C (Tc). This AEC-Q101 qualified component features a low on-resistance of 75mOhm at 26A and 10V Vgs. With a maximum power dissipation of 313W (Tc) and a gate charge of 116 nC, the IPW60R075CPAFKSA1 is designed for demanding automotive applications. The device utilizes through-hole mounting in a PG-TO247-3-41 package and operates within an ambient temperature range of -40°C to 150°C (TJ). Its input capacitance (Ciss) is 4000 pF at 100V, and it supports a gate-source voltage of ±20V.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.74mA |
| Supplier Device Package | PG-TO247-3-41 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
