IPW60R070C6FKSA1
MOSFET N-CH 600V 53A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPW60R070C6FKSA1 is a 600V N-channel CoolMOS™ power MOSFET. This through-hole component offers a continuous drain current of 53A at 25°C with a maximum power dissipation of 391W at 25°C. The device features a low on-resistance of 70mOhm at 25.8A and 10V gate drive. Key parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 3800 pF at 100V. Operating temperature range is -55°C to 150°C. The PG-TO247-3-1 package is suitable for applications in power factor correction, server and telecom power supplies, and industrial motor drives.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 25.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 391W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.72mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 100 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
