IPW60R041C6FKSA1
MOSFET N-CH 600V 77.5A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW60R041C6FKSA1 is a 600V N-channel power MOSFET designed for high-efficiency applications. It features a low on-resistance of 41mOhm at 44.4A and 10V, enabling reduced conduction losses. The device offers a continuous drain current of 77.5A at 25°C (Tc) and a maximum power dissipation of 481W (Tc). With a gate charge of 290nC at 10V and input capacitance of 6530pF at 10V, it is suitable for demanding switching frequencies. The IPW60R041C6FKSA1 utilizes a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power factor correction, server power supplies, and industrial motor drives.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 44.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 481W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 2.96mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6530 pF @ 10 V |
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