Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IPW60R016CM8XKSA1

Banner
productimage

IPW60R016CM8XKSA1

IPW60R016CM8XKSA1

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 600 V 123A (Tc) 521W (Tc) Through Hole PG-TO247-3-U06

Additional Information

Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C123A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 62.5A, 10V
FET Feature-
Power Dissipation (Max)521W (Tc)
Vgs(th) (Max) @ Id4.7V @ 1.48mA
Supplier Device PackagePG-TO247-3-U06
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7545 pF @ 400 V
Qualification-

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SPB11N60C3ATMA1

MOSFET N-CH 650V 11A TO263-3

product image
IPB95R310PFD7ATMA1

LOW POWER_NEW

product image
SPP17N80C3XKSA1

MOSFET N-CH 800V 17A TO220-3