IPW50R399CPFKSA1
MOSFET N-CH 560V 9A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPW50R399CPFKSA1 is an N-channel Power MOSFET from the CoolMOS™ series. This component features a drain-source voltage (Vdss) of 560V and a continuous drain current (Id) of 9A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 399mOhm at 4.9A and 10V gate-source voltage. With a gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 890 pF at 100V, it is designed for efficient switching applications. The power dissipation is rated at 83W (Tc). Supplied in a PG-TO247-3-1 package, this through-hole mounted MOSFET is suitable for high-voltage power conversion systems, including industrial power supplies and solar inverters. It operates within an ambient temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±20V.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 330µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 100 V |
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