IPW50R350CPFKSA1
MOSFET N-CH 550V 10A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, IPW50R350CPFKSA1, offers a 550V drain-source voltage and a continuous drain current of 10A (Tc). This device features a low on-resistance of 350mOhm at 5.6A and 10V Vgs, with a gate charge of 25nC and input capacitance of 1020pF. Designed for through-hole mounting in a PG-TO247-3-1 package, it dissipates up to 89W (Tc) and operates within a temperature range of -55°C to 150°C. Applications include power factor correction, server and telecom power, industrial power supplies, and LED lighting.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 370µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 100 V |
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