IPW50R299CPFKSA1
MOSFET N-CH 550V 12A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW50R299CPFKSA1 is a 550V N-channel power MOSFET. This device features a maximum continuous drain current of 12A (Tc) and a maximum power dissipation of 104W (Tc). The on-resistance (Rds On) is specified at 299mOhm at 6.6A and 10V. Key parameters include a gate charge (Qg) of 31nC @ 10V and input capacitance (Ciss) of 1190pF @ 100V. The MOSFET is housed in a PG-TO247-3-1 package with through-hole mounting. This component is suitable for high-voltage applications and is commonly utilized in power factor correction, switch-mode power supplies, and solar inverters. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 100 V |
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