IPW50R199CPFKSA1
MOSFET N-CH 550V 17A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, IPW50R199CPFKSA1, offers a 550V drain-source voltage and a continuous drain current of 17A at 25°C (Tc). This TO-247-3 packaged component features a maximum on-resistance of 199mOhm at 9.9A and 10V gate-source voltage. Key electrical parameters include a gate charge of 45nC (max) and input capacitance (Ciss) of 1800pF (max) at 100V. With a maximum power dissipation of 139W (Tc), this device is suitable for high-efficiency power conversion applications across industries such as industrial power supplies, server power, and solar inverters. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 9.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 100 V |
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