IPW50R190CEFKSA1
MOSFET N-CH 500V 18.5A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPW50R190CEFKSA1, offers a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 18.5A at 25°C (Tc). This through-hole component features a maximum on-resistance (Rds On) of 190mOhm at 6.2A and 13V gate drive voltage. The device exhibits a typical input capacitance (Ciss) of 1137pF at 100V and a gate charge (Qg) of 47.2nC at 10V. With a maximum power dissipation of 127W at 25°C (Tc) and an operating temperature range of -55°C to 150°C (TJ), the IPW50R190CEFKSA1 is suitable for applications in power factor correction, server power supplies, and industrial motor drives. The component is packaged in a PG-TO247-3-1 housing.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 6.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 127W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 510µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 47.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1137 pF @ 100 V |
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