IPW50R140CPFKSA1
MOSFET N-CH 550V 23A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPW50R140CPFKSA1, is a 550V device designed for high-efficiency power conversion applications. This through-hole component features a TO-247-3 package with a continuous drain current rating of 23A at 25°C and a maximum power dissipation of 192W. Key electrical characteristics include a low on-resistance of 140mOhm at 14A and 10V, and a gate charge of 64 nC at 10V. The input capacitance (Ciss) is specified at a maximum of 2540 pF at 100V. This MOSFET is suitable for use in demanding sectors such as industrial power supplies, server power, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 930µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF @ 100 V |
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