IPU95R450P7AKMA1
MOSFET N-CH 950V 14A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, part number IPU95R450P7AKMA1. This device features a 950V drain-source breakdown voltage and a continuous drain current of 14A at 25°C. The Rds(on) is specified at a maximum of 450mOhm at 7.2A and 10V gate-source voltage. The MOSFET is packaged in a PG-TO251-3 (IPAK) through-hole configuration. Key parameters include a maximum power dissipation of 104W at 25°C, a gate charge of 35 nC at 10V, and an input capacitance (Ciss) of 1053 pF at 400V. The IPU95R450P7AKMA1 is suitable for applications in power factor correction, server and telecom power supplies, and industrial power systems. The operating junction temperature range is from -55°C to 150°C.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 360µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1053 pF @ 400 V |
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