IPU95R1K2P7AKMA1
MOSFET N-CH 950V 6A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series N-Channel MOSFET, part number IPU95R1K2P7AKMA1, offers a 950V drain-source voltage rating and a continuous drain current capability of 6A at 25°C (Tc). This device features a maximum on-resistance of 1.2 Ohms at 2.7A and 10V Vgs. With a gate charge of 15 nC at 10V and input capacitance of 478 pF at 400V, it is suitable for applications requiring high breakdown voltage and efficient switching. The IPU95R1K2P7AKMA1 is housed in a TO-251-3 (IPAK) package with short leads, facilitating through-hole mounting. Its thermal performance is supported by a maximum power dissipation of 52W (Tc) and an operating temperature range of -55°C to 150°C (TJ). This component finds application in power supply units, lighting control, and industrial automation systems.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 140µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 478 pF @ 400 V |
Request a Quote
Clients Also Buy
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
