IPU80R4K5P7AKMA1
MOSFET N-CH 800V 1.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPU80R4K5P7AKMA1, offers an 800V drain-to-source voltage and a continuous drain current of 1.5A at 25°C. This device features a maximum on-resistance of 4.5 Ohms at 400mA and 10V gate-source voltage. The IPU80R4K5P7AKMA1 is housed in a TO-251-3 (IPAK) package with through-hole mounting. Key parameters include a gate charge of 4 nC at 10V and an input capacitance of 250 pF at 500V. It is rated for a maximum power dissipation of 13W at case temperature and operates across a junction temperature range of -55°C to 150°C. This component is suitable for applications in power factor correction, switch mode power supplies, and general-purpose power switching.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 400mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 13W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V |
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