IPU80R3K3P7AKMA1
MOSFET N-CH 800V 1.9A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, part number IPU80R3K3P7AKMA1. This robust component features an 800V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.9A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.3Ohm at 590mA and 10V Vgs, it offers efficient switching. The IPU80R3K3P7AKMA1 is housed in a PG-TO251-3 package with through-hole mounting, suitable for applications requiring high voltage and moderate current. Key parameters include a gate charge (Qg) of 5.8 nC at 10V and input capacitance (Ciss) of 120 pF at 500V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 18W (Tc). This MOSFET is commonly employed in switch-mode power supplies (SMPS), lighting, and industrial power conversion systems.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 590mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 18W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 30µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 500 V |
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