IPU80R2K4P7AKMA1
MOSFET N-CH 800V 2.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPU80R2K4P7AKMA1. This device features an 800V drain-source breakdown voltage and a continuous drain current of 2.5A at 25°C (Tc). With a maximum on-resistance of 2.4 Ohms at 800mA and 10V, it offers efficient switching performance. The MOSFET has a typical gate charge of 7.5 nC at 10V and an input capacitance of 150 pF at 500V. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it dissipates a maximum of 22W at 25°C (Tc). This component is suitable for demanding applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 500 V |
Request a Quote
Clients Also Buy
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
