IPU80R1K4CEAKMA1
MOSFET N-CH 800V 3.9A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPU80R1K4CEAKMA1 is an N-Channel Power MOSFET with a drain-source voltage (Vdss) of 800 V. This component offers a continuous drain current (Id) of 3.9 A at 25°C and a maximum power dissipation (Pd) of 63 W at the same temperature. The on-resistance (Rds On) is specified at a maximum of 1.4 Ohm under a gate-source voltage (Vgs) of 10 V and a drain current (Id) of 2.3 A. Key parameters include a gate charge (Qg) of 23 nC at 10 V and an input capacitance (Ciss) of 570 pF at 100 V. The device features a threshold voltage (Vgs(th)) of 3.9 V at 240 µA and a maximum gate-source voltage of ±20 V. Packaged in a TO-251-3 (IPAK) housing with short leads, this MOSFET is suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in applications such as power factor correction, switch mode power supplies, and general-purpose high-voltage switching.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V |
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