IPU80R1K2P7AKMA1
MOSFET N-CH 800V 4.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, part number IPU80R1K2P7AKMA1. This 800 V device features a continuous drain current of 4.5 A at 25°C and a maximum power dissipation of 37 W at 25°C. The Rds On is specified at 1.2 Ohm maximum at 1.7 A, 10 V. Key parameters include a gate charge (Qg) of 11 nC maximum at 10 V and input capacitance (Ciss) of 300 pF maximum at 500 V. The component is housed in a PG-TO251-3 package with through-hole mounting. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in power factor correction (PFC), switch-mode power supplies (SMPS), and general-purpose power conversion.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 80µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 500 V |
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