IPU80R1K0CEBKMA1
MOSFET N-CH 800V 5.7A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IPU80R1K0CEBKMA1 is an N-Channel CoolMOS™ Power Transistor with a Drain-Source Voltage (Vdss) of 800 V. This component features a continuous drain current (Id) of 5.7 A (Tc) and a maximum power dissipation of 83 W (Tc). The Rds On (Max) is specified at 950 mOhm at 3.6 A and 10 V gate-source voltage. With a maximum gate charge (Qg) of 31 nC at 10 V and an input capacitance (Ciss) of 785 pF at 100 V, this MOSFET is designed for efficient switching. The device is housed in a PG-TO251-3 (TO-251-3 Short Leads, IPAK) package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power supplies for industrial and consumer electronics.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 100 V |
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