IPU80R1K0CEAKMA1
MOSFET N-CH 800V 5.7A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel MOSFET, part number IPU80R1K0CEAKMA1. This 800 V device offers a continuous drain current of 5.7 A at 25°C and a maximum power dissipation of 83 W at 25°C (Tc). Featuring a low on-resistance of 950 mOhm at 3.6 A and 10 V Vgs, this MOSFET is suitable for demanding applications. Key parameters include a gate charge (Qg) of 31 nC at 10 V and input capacitance (Ciss) of 785 pF at 100 V. The device operates over an extended temperature range of -55°C to 150°C (TJ). Packaged in a PG-TO251-3-341 (TO-251-3 Short Leads, IPAK) through-hole configuration, this component is commonly utilized in switch-mode power supplies and industrial applications.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO251-3-341 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 100 V |
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