IPU78CN10N G
MOSFET N-CH 100V 13A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPU78CN10N-G is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 13A (Tc) at 25°C. With a maximum power dissipation of 31W (Tc), it is suitable for high-power switching scenarios. The device offers a low on-resistance (Rds On) of 78mOhm at 13A and 10V gate drive, ensuring efficient power transfer. Key parameters include a gate charge (Qg) of 11 nC @ 10V and input capacitance (Ciss) of 716 pF @ 50V. The IPU78CN10N-G utilizes advanced MOSFET technology and is housed in a PG-TO251-3 package, a TO-251-3 Short Leads (IPAK) type, facilitating through-hole mounting. It operates across a wide temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±20V. This component finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 12µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 716 pF @ 50 V |
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