IPU64CN10N G
MOSFET N-CH 100V 17A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPU64CN10N-G is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 17A at 25°C (Tc), with a maximum power dissipation of 44W (Tc). The Rds(on) is specified at a maximum of 64mOhm when driven with 10V Vgs and carrying 17A. Key parameters include a gate charge (Qg) of 9 nC (max) at 10V Vgs and input capacitance (Ciss) of 569 pF (max) at 50V Vds. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is packaged in a PG-TO251-3 (IPAK) through-hole configuration. This MOSFET is suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 569 pF @ 50 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
