IPU60R950C6BKMA1
MOSFET N-CH 600V 4.4A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPU60R950C6BKMA1 is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a maximum continuous drain current of 4.4A (Tc) and a low on-resistance of 950mOhm at 1.5A, 10V. The device offers a gate charge of 1.5 nC at 10V and an input capacitance of 280 pF at 100V. Packaged in a PG-TO251-3 (IPAK) through-hole package, it has a maximum power dissipation of 37W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for power supply units and industrial applications requiring robust performance and thermal management.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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