IPU60R950C6AKMA1
MOSFET N-CH 600V 4.4A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series N-channel power MOSFET, part number IPU60R950C6AKMA1, offers a 600V drain-source voltage and a continuous drain current of 4.4A at 25°C (Tc). This device features a maximum on-resistance of 950mOhm at 1.5A, 10V, with a gate charge of 13nC at 10V. The IPU60R950C6AKMA1 is housed in a PG-TO251-3 package, a TO-251-3 (IPAK) with short leads, suitable for through-hole mounting. With a maximum power dissipation of 37W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is designed for applications in consumer electronics, industrial power supplies, and lighting.
Additional Information
Series: CoolMOS™ C6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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