IPU60R600C6BKMA1
MOSFET N-CH 600V 7.3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ IPU60R600C6BKMA1 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 7.3A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 600mOhm at 2.4A and 10V gate-source voltage. With a maximum power dissipation of 63W (Tc) and a gate charge (Qg) of 20.5 nC at 10V, it is suitable for demanding power conversion tasks. The input capacitance (Ciss) is rated at 440pF maximum at 100V. The IPU60R600C6BKMA1 is housed in a PG-TO251-3 package, facilitating through-hole mounting. This MOSFET is utilized in various industries including consumer electronics, industrial power supplies, and lighting applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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