IPU60R600C6AKMA1
MOSFET N-CH 600V 7.3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series N-Channel Power MOSFET, part number IPU60R600C6AKMA1, offers a 600V drain-source breakdown voltage and a continuous drain current of 7.3A at 25°C (Tc). This device features a maximum on-resistance of 600mOhm at 2.4A and 10V Vgs. With a gate charge of 20.5 nC and input capacitance of 440 pF, it is designed for efficient switching applications. The IPU60R600C6AKMA1 is housed in a PG-TO251-3 (IPAK) package with through-hole mounting. Its maximum power dissipation is 63W (Tc), and it operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in power supply units, lighting, and industrial applications where high voltage and efficiency are critical.
Additional Information
Series: CoolMOS™ C6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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