IPU60R3K4CEAKMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel MOSFET, part number IPU60R3K4CEAKMA1, from the CoolMOS™ CE series. This device features a 600V drain-source voltage and a continuous drain current of 2.6A at 25°C. The Rds On is specified at a maximum of 3.4 Ohms at 500mA, 10V. Key parameters include a gate charge of 4.6 nC and input capacitance of 93pF at 100V. Designed for through-hole mounting, it is supplied in a PG-TO251-3 package. Operating temperature range is -40°C to 150°C. This component is suitable for consumer applications.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 93 pF @ 100 V |
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