IPU60R2K1CEBKMA1
MOSFET N-CH 600V 2.3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, IPU60R2K1CEBKMA1, offers 600V drain-to-source voltage with a continuous drain current of 2.3A at 25°C (Tc). This through-hole mounted component features a maximum on-resistance of 2.1 Ohm at 760mA and 10V gate-source voltage. The device is packaged in a PG-TO251-3 (IPAK) package and supports a maximum power dissipation of 22W (Tc). Key parameters include a gate charge of 6.7 nC at 10V and an input capacitance of 140 pF at 100V. It is suitable for applications in power supply, lighting, and industrial sectors.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 760mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 100 V |
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