IPU60R1K5CEBKMA1
MOSFET N-CH 600V 3.1A TO251Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, part number IPU60R1K5CEBKMA1. This device features a 600 V drain-source breakdown voltage and a continuous drain current of 3.1 A at 25°C (Tc). The MOSFET offers a maximum on-resistance of 1.5 Ohms at 1.1 A drain current and 10 V gate-source voltage. Key parameters include a gate charge of 9.4 nC (max) at 10 V and input capacitance of 200 pF (max) at 100 V. With a maximum power dissipation of 28 W (Tc), this component is housed in a TO-251 package with short leads, suitable for through-hole mounting. The operating temperature range is -40°C to 150°C (TJ). This MOSFET is utilized in applications such as switch mode power supplies and lighting.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
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