IPU60R1K5CEAKMA1
MOSFET N-CH 600V 3.1A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, part number IPU60R1K5CEAKMA1. This component features a 600 V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 3.1 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 1.5 Ohm at 1.1 A and 10 V Vgs. Key parameters include a gate charge (Qg) of 9.4 nC at 10 V and an input capacitance (Ciss) of 200 pF at 100 V. It utilizes MOSFET technology with a threshold voltage (Vgs(th)) of 3.5 V at 90 µA. The device is housed in a TO-251-3 Short Leads, IPAK (PG-TO251-3) package with through-hole mounting. Operating temperature ranges from -40°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch-mode power supplies, and battery chargers.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO251-3 |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
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