IPU60R1K4C6AKMA1
MOSFET N-CH 600V 3.2A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series N-Channel Power MOSFET, part number IPU60R1K4C6AKMA1. This device features a 600 V drain-source breakdown voltage and a continuous drain current capability of 3.2 A at 25°C case temperature. The Rds(on) is specified at a maximum of 1.4 Ohms at 1.1 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 9.4 nC (max) at 10 V and input capacitance (Ciss) of 200 pF (max) at 100 V. The IPU60R1K4C6AKMA1 is housed in a PG-TO251-3 package with through-hole mounting. Maximum power dissipation is 28.4 W at the case temperature. This component is suitable for applications in power supply units and general purpose power switching.
Additional Information
Series: CoolMOS™ C6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28.4W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
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