IPU60R1K0CEBKMA1
MOSFET N-CH 600V 4.3A TO251Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CE series N-Channel MOSFET, part number IPU60R1K0CEBKMA1, offers a 600V drain-to-source voltage (Vdss) and 4.3A continuous drain current (Id) at 25°C. This through-hole mounted component, packaged in a TO-251-3 Short Leads (IPAK) case, features a maximum on-resistance (Rds On) of 1 Ohm at 1.5A and 10V. Designed with a 13nC gate charge (Qg) and 280pF input capacitance (Ciss), it operates within a temperature range of -40°C to 150°C (TJ). The IPU60R1K0CEBKMA1 is suitable for applications requiring high voltage and efficient switching, commonly found in power supply units and lighting control systems. It has a maximum power dissipation of 37W (Tc) and a gate-source voltage (Vgs) limit of ±20V.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
Request a Quote
Clients Also Buy
IPD80R1K0CEATMA1
MOSFET N-CH 800V 5.7A TO252-3
IPN60R3K4CEATMA1
MOSFET N-CH 600V 2.6A SOT223
IPN50R2K0CEATMA1
MOSFET N-CH 500V 3.6A SOT223
