IPU60R1K0CEAKMA2
MOSFET N-CH 600V 4.3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series IPU60R1K0CEAKMA2 is a 600V N-Channel Power MOSFET. This component features a maximum continuous drain current of 4.3A at 25°C (Tc) and a maximum power dissipation of 61W (Tc). The Rds(on) is specified at 1 Ohm maximum for 1.5A and 10V Vgs. Key parameters include a gate charge of 13 nC at 10V and input capacitance of 280 pF at 100V. The device is packaged in a PG-TO251-3 configuration for through-hole mounting. This MOSFET is suitable for applications in power supplies and industrial motor control.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 61W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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