IPU60R1K0CEAKMA1
MOSFET N-CH 600V 4.3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CE series N-channel power MOSFET, part number IPU60R1K0CEAKMA1. This component features a 600V drain-source voltage and a continuous drain current of 4.3A at 25°C (Tc). The TO-251-3 (IPAK) package with through-hole mounting is suitable for applications requiring robust thermal performance. Key parameters include a maximum gate charge (Qg) of 13 nC at 10V and an input capacitance (Ciss) of 280 pF (max) at 100V. Its on-resistance (Rds On) is 1 Ohm at 1.5A and 10V. This device is engineered for high-efficiency power conversion in various industrial and consumer electronics applications. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO251-3 |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
Request a Quote
Clients Also Buy
IPD80R1K0CEATMA1
MOSFET N-CH 800V 5.7A TO252-3
IPN60R3K4CEATMA1
MOSFET N-CH 600V 2.6A SOT223
IPN50R2K0CEATMA1
MOSFET N-CH 500V 3.6A SOT223
