IPU50R950CEAKMA2
MOSFET N-CH 500V 4.3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPU50R950CEAKMA2 is an N-channel CoolMOS™ CE series power transistor. This device features a drain-source breakdown voltage of 500 V and a continuous drain current of 4.3 A at 25°C (Tc). The Rds(on) is specified at a maximum of 950 mOhm for a drain current of 1.2 A and a gate-source voltage of 13 V. Key parameters include an input capacitance (Ciss) of 231 pF (max) at 100 V and a gate charge (Qg) of 10.5 nC (max) at 10 V. The power dissipation is rated at 53 W (Tc). This component is housed in a TO-251-3 (IPAK) package with through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). Typical applications include power factor correction (PFC) and switch-mode power supplies (SMPS) in consumer electronics and industrial automation.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 231 pF @ 100 V |
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