IPU50R950CEAKMA1
MOSFET N-CH 500V 4.3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPU50R950CEAKMA1 is a 500V N-channel CoolMOS™ CE series power MOSFET. This device features a low on-resistance of 950mOhm maximum at 1.2A and 13V gate drive, with a continuous drain current of 4.3A (Tc). The IPU50R950CEAKMA1 is packaged in a PG-TO251-3 (IPAK, TO-251AA) through-hole configuration, offering a maximum power dissipation of 53W (Tc). Key parameters include a gate charge of 10.5 nC (max) at 10V and input capacitance of 231 pF (max) at 100V. This component is suitable for applications in power factor correction (PFC), switch-mode power supplies (SMPS), and lighting.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 231 pF @ 100 V |
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