IPU50R2K0CEAKMA1
MOSFET N-CH 500V 2.4A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, part number IPU50R2K0CEAKMA1. This device features a 500V drain-to-source voltage and a continuous drain current of 2.4A (Tc). With a maximum on-resistance of 2 Ohms at 600mA and 13V, it offers efficient switching performance. Key parameters include a gate charge of 6 nC at 10V and input capacitance of 124 pF at 100V. The device is packaged in a TO-251-3 (IPAK) through-hole configuration and supports a maximum power dissipation of 33W (Tc). Operating temperature range is from -55°C to 150°C. This MOSFET is suitable for applications in power supply units and general-purpose power switching.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 600mA, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 50µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 124 pF @ 100 V |
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