IPU50R1K4CEBKMA1
MOSFET N-CH 500V 3.1A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel MOSFET, part number IPU50R1K4CEBKMA1. This device features a 500V drain-source voltage (Vdss) and a continuous drain current of 3.1A at 25°C (Tc). The low on-resistance is specified as 1.4 Ohm maximum at 900mA and 13V gate-source voltage. Key parameters include a maximum power dissipation of 25W (Tc), a gate charge of 8.2 nC at 10V, and input capacitance of 178 pF at 100V. The IPU50R1K4CEBKMA1 is housed in a PG-TO251-3 package with through-hole mounting. This component is suitable for applications in power supply units and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 900mA, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 178 pF @ 100 V |
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